How Is FinFET Technology Changing the Meaning of Chip Sign-Off?

Physical Representation FinFET TechnologyModern high-tech products using chips that are designed with the latest deep sub-micron process technologies (28nm and below) and FinFET technology offer higher performance, smaller footprint and lower power. However, power integrity analysis and reliability challenges become increasingly complex for chip package designs using these devices.

More stringent manufacturing rules present basic layout challenges and new design innovations require careful consideration of effects such as electromigration (EM), electrostatic discharge (ESD) and noise coupling through substrate, signal and power rails. Even the most thorough sign-off process can often fail to prevent tape-out hurdles or extensive redesign. Therefore, forward-thinking design teams need to address reliability and power integrity long before final sign-off, accounting for their impact during the design process itself. Continue reading

RedHawk 2014 Enables FinFET-Based Designs

image of ANSYS RedHawk GUIToday, I’m pleased to announce the launch of ANSYS Redhawk 2014. RedHawk was the industry’s first foundry-certified, full-chip sign-off solution for power noise and reliability. Over the past 10 years, its accuracy, performance and scalability benefits have enabled thousands of successful designs to make it into production by all major semiconductor companies. The newest version of the software will help to ensure that RedHawk continues to be a technology leader and solution of choice for chip designers around the world. Continue reading

What’s With All The Noise About FinFETs?

Power noise integrity challenges designers face in FinFET-based design

ReFinFET2cently, there has been a lot of talk around designing systems-on-chips (SoCs) using FinFET technology. So what is a FinFET and what’s all the noise about? Simply put, FinFET is a three-dimensional field-effect transistor (FET) where the gate is wrapped around an elevated channel, creating a “fin”. Compared to traditional planar MOS transistors, FinFET architecture offers reduced leakage power and increased drive current, resulting in lower power, higher performance SoCs for mobile, networking, computing, and other applications. Continue reading